SEMI標(biāo)準(zhǔn) 2014年第三輪全球投票啟動(dòng)

SEMI標(biāo)準(zhǔn)2014年第三輪全球投票已于日前啟動(dòng)，此輪投票共有泛半導(dǎo)體材料、環(huán)境健康安全、設(shè)施、FPD-材料和部件、FPD-量測(cè)、氣體、HB-LED、光伏-自動(dòng)化、光伏-材料、光伏、物理接口和傳送、硅片等12個(gè)標(biāo)準(zhǔn)技術(shù)委員會(huì)的30個(gè)標(biāo)準(zhǔn)公開(kāi)向全球征集投票意見(jiàn)。本輪投票的截止日期是2014年5月22日，歡迎產(chǎn)業(yè)內(nèi)各公司就標(biāo)準(zhǔn)內(nèi)容發(fā)表意見(jiàn)。以下是各標(biāo)準(zhǔn)列表：Compound Semiconductor MaterialsDoc. 5707 - Revision of SEMI M40-1109 With Title Change To: Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers EH&SDoc. 4316K - Line Item Revision to SEMI S2-0712b, Environmental, Health, and Safety Guideline for Semiconductor Manufacturing Equipment, and SEMI S22-0712a, Safety Guideline for the Electrical Design of Semiconductor Manufacturing Equipment. DR on Multiple TopicsDoc. 4683C - Line Item Revisions to SEMI S2-0712b, Environmental, Health, and Safety Guideline for Semiconductor Manufacturing Equipment. Delayed Revisions Related to Chemical ExposureDoc. 5591 - Line Item Revisions to SEMI S2-0712b, Environmental, Health, and Safety Guideline for Semiconductor Manufacturing Equipment. Delayed revisions related to fire protectionFacilitiesDoc. 5714 - Reapproval of SEMI F19-0304 (Reapproved 0310), Specification for the Surface Condition of the Wetted Surfaces of Stainless Steel ComponentsDoc. 5715 - Reapproval of SEMI F77-0703 (Reapproved 0310), Test Method for Electrochemical Critical Pitting Temperature Testing of Alloy Surfaces Used in Corrosive Gas SystemsDoc. 5711 - Reapproval of SEMI E72-0600 (Reapproved 0305), Specification and Guide for 300 mm Equipment Footprint, Height, and WeightFPD - Materials and ComponentsDoc. 5550 - New Standard: Guide for Measuring Dimensions for Plastic Films/SubstratesDoc. 5696 - Reapproval of SEMI D9-0303 (Reapproved 0709) - Terminology for FPD SubstratesFPD – MetrologyDoc. 5633A - New Standard: Test Method for Viewing Angle Characteristic using Mixed Color on Visual DisplaysGasesDoc. 5714 - Reapproval of SEMI F19-0304 (Reapproved 0310), Specification for the Surface Condition of the Wetted Surfaces of Stainless Steel ComponentsDoc. 5715 - Reapproval of SEMI F77-0703 (Reapproved 0310), Test Method for Electrochemical Critical Pitting Temperature Testing of Alloy Surfaces Used in Corrosive Gas SystemsDoc. 5711 - Reapproval of SEMI E72-0600 (Reapproved 0305), Specification and Guide for 300 mm Equipment Footprint, Height, and WeightHB-LEDDoc. 5707 - Revision of SEMI M40-1109 With Title Change To: Guide for Measurement of Roughness of Planar Surfaces on Polished WafersInformation and ControlDoc. 5486A - New Standard: Specification for Predictive Carrier Logistics (PCL)Doc. 5507A - Line Item Revisions to SEMI E132-0310E2, Specification for Equipment Client Authentication and AuthorizationPhotovoltaic – AutomationDoc. 5697 - Line Item Revisions to SEMI PV35-0114, Specification for Horizontal Communication between Equipment for Photovoltaic Fabrication SystemDoc. 5698 - Line Item Revisions to SEMI PV35.1-0114, Media Interface Specifications for a Horizontal Communication between EquipmentPhotovoltaic – MaterialsDoc. 5532 - New Standard: Test Method for Measurement of Cracks in PV Silicon Wafers in PV Modules by Laser ScanningDoc. 5382B - New Standard: Specification for Quasi-monocrystalline Silicon Wafers used in Photovoltaic Solar CellsDoc. 5477B - New Standard: Test Method for Determining B, P, Fe, Al, Ca Contents in Silicon Powder for PV Applications by Inductively-Coupled-Plasma Optical Emission SpectrometryPhotovoltaicDoc. 5659 - New Standard: Test Method based on RGB for C-Si Solar Cell ColorDoc. 5382B - New Standard: Specification for Quasi-monocrystalline Silicon Wafers used in Photovoltaic Solar CellsDoc. 5477B - New Standard: Test Method for Determining B, P, Fe, Al, Ca Contents in Silicon Powder for PV Applications by Inductively-Coupled-Plasma Optical Emission SpectrometryPhysical Interfaces and CarriersDoc. 5711 - Reapproval of SEMI E72-0600 (Reapproved 0305), Specification and Guide for 300 mm Equipment Footprint, Height, and WeightSilicon WaferDoc. 4844C - New Standard: Guide for the Measurement of Trace metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass SpectrometryDoc. 5404 - Withdrawal of SEMI MF657-0707E, Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact ScanningDoc. 5539 - Revision to SEMI MF1390-0707 (Reapproved 0512) With Title Change To: Test Method for Measuring Bow and Warp on Silicon Wafers by Automated NonContact ScanningDoc. 5662 - Revision of SEMI M35-1107, Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated InspectionDoc. 5707 - Revision of SEMI M40-1109 With Title Change To: Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers各待投票標(biāo)準(zhǔn)的詳細(xì)內(nèi)容請(qǐng)查閱：http://ams.semi.org/ebusiness/standards/ballots.aspx標(biāo)準(zhǔn)聯(lián)系人：沈紅 女士Email: kshen@semi.orgTEL: 021-6027 8568